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| 2SA1084, 2SA1085 Silicon PNP Epitaxial REJ03G0635-0300 (Previous ADE-208-1007A) Rev.3.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1084 -90 -90 -5 -100 100 400 150 -55 to +150 2SA1085 -120 -120 -5 -100 100 400 150 -55 to +150 Unit V V V mA mA mW C C Rev.3.00 Aug 10, 2005 page 1 of 5 2SA1084, 2SA1085 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise voltage referred to input Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob en 2SA1084 Min Typ Max -90 -- -- -90 -5 -- -- 250 -- -- -- -- -- -- -- -- -- -- -- -0.6 90 3.5 0.5 -- -- -0.1 -0.1 800 -0.2 -- -- -- -- 2SA1085 Min Typ Max -120 -- -- -120 -5 -- -- 250 -- -- -- -- -- -- -- -- -- -- -- -0.6 90 3.5 0.5 -- -- -0.1 -0.1 800 -0.2 -- -- -- -- Unit V V V A A Test conditions IC = -10 A, IE = 0 IC = -1 mA, RBE = IE = -10 A, IC = 0 VCB = -50 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA V V MHz pF nV/ Hz IC = -10 mA, IB = -1 mA VCE = -12 V, IC = -2 mA VCE = -12 V, IC = -2 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6V, IC = -10 mA, f = 1 kHz, Rg = 0, f = 1Hz 1. The 2SA1084 and 2SA1085 are grouped by hFE as follows. D E 250 to 500 400 to 800 Note: Rev.3.00 Aug 10, 2005 page 2 of 5 2SA1084, 2SA1085 Main Characteristics Maximum Collector Dissipation Curve Collector power dissipation PC (mW) 600 -50 Typical Output Characteristics (1) 40 Collector current IC (mA) -1 -1 -40 20 0 -10 -8 0 400 -30 -60 P C -40 =0 .4 W -20 200 -20 A -10 IB = 0 0 50 100 150 0 -4 -8 -12 -16 -20 Ambient Temperature Ta (C) Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) -20 -4 0 -35 Typicaol Transfer Characteristics -10 VCE = -12 V Collector Current IC (mA) Collector current IC (mA) -30 -25 -20 -15 -16 -5 -12 -2 -1.0 -0.5 -8 -1 0 -5 A IB = 0 -4 -0.2 -0.1 0 -4 -8 -12 -16 -20 0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 5,000 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) -1.0 -0.5 IC = 10 IB DC current teransfer ratio hFE VCE = -12 V Pulse 2,000 1,000 500 200 100 50 -0.1 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -0.3 -1.0 -3 -10 -30 -100 -2 -5 -10 -20 -50 -100 Collector Current IC (mA) Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 2SA1084, 2SA1085 Base to Emitter Saturation Voltage vs. Collector Current IC = 10 IB Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) Base to emitter saturation voltage VBE(sat) (V) -10 -5 2,000 VCE = -12 V 1,000 500 -2 -1.0 -0.5 200 100 50 -0.2 -0.1 -1 -2 -5 -10 -20 -50 -100 20 -1 -2 -5 -10 -20 -50 -100 Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Current IC (mA) Contours of Constant Noise Figure (1) Collector output capacitance Cob (pF) Singnal source resistance Rg (k) 100 50 IE = 0 f = 1 MHz 100 30 10 3 1.0 0.3 0.1 0.03 NF = 0.5 dB VCE = -6 V f = 1 kHz 20 10 5 1 2 4 6 2 1 -0.5 -1.0 -2 -5 -10 -20 -50 10 0.01 -0.01 -0.03 -0.1 -0.3 -1.0 -3 -10 -30 -100 Collector to Base Voltage VCB (V) Collector Current IC (mA) Contours of Constant Noise Figure (2) Contours of Constant Noise Figure (3) Singnal source resistance Rg (k) 30 10 3 1.0 0.3 0.1 0.03 NF = 0.5 dB VCE = -6 V f = 120 Hz Singnal source resistance Rg (k) 100 100 30 10 3 1.0 0.3 0.1 0.03 12 NF = 0.5 dB VCE = -6 V f = 10 Hz 4 6 10 1246 10 0.01 -0.01 -0.03 -0.1 -0.3 -1.0 -3 -10 -30 -100 0.01 -0.01 -0.03 -0.1 -0.3 -1.0 -3 -10 -30 -100 Collector Current IC (mA) Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 5 2SA1084, 2SA1085 Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003DA-A Package Name TO-92(1) / TO-92(1)V MASS[Typ.] 0.25g Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.55 Max 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1084ETZ-E 2SA1085DTZ-E 2SA1085ETZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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